ENERGY SPECTRA OF STRONGLY LIGERIZED SEMICONDUCTORS AND SEMICONDUCTOR COMPOUNDS

Ibragimova Nilufarkhan Ganijon kizi

doi:10.5281/zenodo.11093060

Ibragimova Nilufarkhan Ganijon kizi

Abstract. In this work, the temperature dependence of discrete energy states in the silicon band gap was analyzed using a mathematical model of the band gap width of semiconductors depending on the alloying level and the density of states spectrum.

Keywords: mathematical model, discrete states, spectrum, semiconductor compounds, temperature, concentration.

References:

Gulyamov G., Sharibaev N. Yu. Temperaturnaya zavisimost shirny zapreshchennoy zony Si i vyaz s teplovym shireniem plotnosti sostoyaniy // Fizicheskaya injeneriya poverkhnosti 2012, t.10, №2p.4-8. Gulyamov G., Sharibaev N. Yu. Teplovoe ushirenie plotnosti sostoyaniy i temperaturnaya zavisimost shirnyy zapreshchennoy zony Ge // Fizicheskaya injeneriya poverkhnosti 2012, vol. 10, No. 4 p. 308-312. Gulyamov G., Sharibaev N. Yu. Study of the temperature dependence of the sweet forbidden zone Si and Ge with auxiliary model. // Fizicheskaya inzheneriya poverkhnosti 2013, t.11, № 2 c.231-237 Ibragimov R. methodology of teaching physics in vocational schools // https://doi.org/10.5281/zenodo.8364499 Ibragimov R. methodology of teaching physics in vocational schools // https://scholar.google.com/scholar?hl=en&as_sdt=0%2C5&q=%222181-3337%22&oq=