X-RAY AND SEM ANALYSIS OF SILICON DIFFUSED WITH ZINC AND SULFUR IMPURITY ATOMS

Khaqqulov Maruf Keldiyorovich

doi:10.5281/zenodo.10125406

X-RAY AND SEM ANALYSIS OF SILICON DIFFUSED WITH ZINC AND SULFUR IMPURITY ATOMS

14.11.2023 International Scientific Journal "Science and Innovation". Series A. Volume 2 Issue 11

Khaqqulov Maruf Keldiyorovich

Abstract. In this work, Zn and S atoms were dopped into silicon by diffusion method, and the effect of Zn and S atoms on the crystal lattice of silicon was studied. Researches and measurements (XRD-6100 Shimadzu X-ray diffractometer, SEM-EVO MA 10 scanning electron microscope) were carried out on modern devices. Measurements were carried out at room temperature (T=300 °K). The results are the basis for our conclusion that ZnS binary compounds are formed on the surface of the Si sample.

Keywords: silicon, zinc, sulfur, binary compound, impurity, diffusion

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