THERMODYNAMIC CONDITIONS FOR THE FORMATION OF GaSb BINARY COMPOUND IN Si SAMPLE

Isakov Bobir Olimjonovich; Xudoynazarov Zafar Burxutovich; Kushiev Giyosiddin  Abdivaxob ogli; Sattorov Abdujalol Abduhamidovich, Abduqahhorov Foziljon Ismoiljon ogli

doi:10.5281/zenodo.8431496

THERMODYNAMIC CONDITIONS FOR THE FORMATION OF GaSb BINARY COMPOUND IN Si SAMPLE

11.10.2023 International Scientific Journal "Science and Innovation". Series A. Volume 2 Issue 10

Isakov Bobir Olimjonovich, Xudoynazarov Zafar Burxutovich, Kushiev Giyosiddin Abdivaxob ogli, Sattorov Abdujalol Abduhamidovich, Abduqahhorov Foziljon Ismoiljon ogli

Abstract. In this work, silicon samples ligated with gallium and antimony impurity atoms were investigated by the 4-probe method. The diffusion process was carried out at temperatures of 1000, 1100, 1175 and 1250 °C. The results of the experiment revealed that 1100 °C is the most favorable temperature for the formation binary compound GaSb of Ga and Sb impurity atoms. These obtained results require a deeper study of the bonding conditions of Ga and Sb impurity atoms.

Keywords: silicon, gallium, antimony, binary compound, resistivity

References:

1. Toyota H., Mikami A., Endoh T., Jinbo Y., and Uchitomi N. Effect of Sb template layer on GaSb thin films grown on Si(111) substrate by molecular beam epitaxy Phys. Status Solidi C 8, No. 2, 269–271 (2011). 2. Daria M. Sedlovets, Maxim A. Knyazev, Oleg V. Trofimov, and Sergei V. Koveshnikov Graphene-like film CVD on e-beam exposed SiO2/Si by the pyrolysis of different oxygen-containing precursors Fullerenes, nanotubes and carbon nanostructures 2020 ISSN: 1536-383X (Print) 1536-4046 3. Bakhadyrkhanov M.K., Mavlyanov A.Sh., Sodikov U.Kh., and Khakkulov M.K. Silicon with binary elementary cells as a novel class of materials for future photoenergetics Applied Solar Energy, 2015, Vol. 51, No. 4, pp. 258–261. 4. Norris D.J. and Walther T. Stranski–Krastanov. Growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory. Materials science and technology, ISSN: 0267-0836 (Print) 1743-2847 (Online) 2018 5. Saidov A.S., Saidov M.S., Usmonov Sh.N., Amonov K.A., and Saparov D. Growth and Spectral Sensitivity of pSi–n(Si2)1–x(ZnSe)x Structures. Applied Solar Energy, 2008, Vol. 44, No. 2, pp. 144–145. 6. Asthana P.K. High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply. Journal of Semiconductors, 36(2), 024003 (2015). 7. Goswami Y., Asthana P., and Ghosh B. Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications. Journal of Semiconductors, 38(5) 054002 (2017). 8. Liu J., Tang M., Deng H., Shutts S., Wang L., Smowton P.M., Jin C., et al. Theoretical analysis and modelling of degradation for III–V lasers on Si. Journal of Physics D: Applied Physics, 55, 404006 (2022). 9. Xu X.-Y., Jiang J.-K., Chen W.-Q., Cui S.-N., Zhou W.-G., Li N., Chang F.-R., et al. Wet etching and passivation of GaSb-based very long wavelength infrared detectors. Chinese Physics B, 31(6) 068503 (2022). 10. Wagner H., Ohrdes T., Dastgheib-Shirazi A., Puthen-Veettil B., Konig D. and Altermatt P.P. A numerical simulation study of gallium phosphide/silicon heterojunction passivated emitter and rear solar cells. J. Appl. Phys. Jpn. 115(4), 044508 (2014). 11. X.M. Iliyev, S.B. Isamov, B.O. Isakov, U.X. Qurbonova, S.A. Abduraxmonov, East Eur. J. Phys. 3, 303 (2023), https://doi.org/10.26565/2312-4334-2023-3-29 12. X.M. Iliyev, V.B. Odzhaev, S.B. Isamov, B.O. Isakov, B.K. Ismaylov, K.S. Ayupov, S.I. Hamrokulov, S.O. Khasanbaeva, East Eur. J. Phys. 3, 363 (2023), https://doi.org/10.26565/2312-4334-2023-3-38 13. Isakov, B.O., Rakhmonov, B.R. and Subkhonberdiev, S.N., 2022. Influence of Impurity Atoms of Gallium and Antimony on the Concentration of Optically Active Oxygen in the Silicon Lattice. International journal on orange technology, Volume: 4 Issue: 6 |Jun 2022. pp.57-60. 14. S Hamrokulov, G Kushiev, B Isakov, Z Umarkhodjaeva DIGITAL MICROSCOPE Analysis of chemically cleaned silicon surface Science and innovation, 2023. Т.2 №5 Pp.138-142 15. Isakov, B., Hamrokulov, S., Abdurakhmonov, S. and Abdurakhmonov, H., 2023. DOPED SILICON WITH GALLIUM AND ANTIMUM IMPURITY ATOMS. Science and innovation, 2(A5), pp.255-261. 16. Илиев, Х.М., Просолович, В.С., Исамов, С.Б., Исаков, Б.О. and Янковский, Ю.Н., 2022. Расчет профилей распределения примесных атомов галлия и сурьмы при их совместной диффузии в кремнии. Минск : БГУ, 2022. – С. 89-93. 17. Абдурахманов Б.А., Исамов С.Б., Кушиев Г.А. Автоматизированная установка определения параметров полупроводников методом Ван Дер Пау. Приборы, 2022 №2. С.14-18. 18. Iliyev, X., Xudoynazarov, Z., Isakov, B., Uralbayev, X. and Kushiev, G., 2023. IMPURITY OF ATOMS OF MANGANESE DIFFUSION BY OUTSIDE ELECTRIC FIELD INTO SILICON. Science and innovation, 2(A8), pp.107-111. 19. Павлов Л.П. Методы измерения параметров полупроводниковых материалов. 2-е изд., перераб. и доп. —М.:Высш. шк., 1987. —289 с.: ил.