DOPED SILICON WITH GALLIUM AND ANTIMUM IMPURITY ATOMS

Isakov Bobir Olimjonovich; Hamrokulov Shahzodbek Ikhtiyor ugli; Abdurakhmonov  Samandar Abdusamad ugli; Abdurakhmonov Halimjon Abdusamad ugli

doi:10.5281/zenodo.7979273

DOPED SILICON WITH GALLIUM AND ANTIMUM IMPURITY ATOMS

28.05.2023 International Scientific Journal "Science and Innovation". Series A. Volume 2 Issue 5

Isakov Bobir Olimjonovich, Hamrokulov Shahzodbek Ikhtiyor ugli, Abdurakhmonov Samandar Abdusamad ugli, Abdurakhmonov Halimjon Abdusamad ugli

Abstract. In this work, a mathematical model of the concentration distribution of gallium and antimony elements theoretically doped into silicon by diffusion method was studied using the MathCad program. The essence of theoretical calculations and mathematical modeling of the diffusion process is not to waste experiments, to determine in advance the depth of penetration of the impurity atoms into silicon from diffusion, and to plan the experiments and increase the productivity of the results.

Keywords: silicon, gallium, antimony, concentration, diffusion, diffusion coefficient

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