INVESTIGATION OF RECOMBINATIONAL PROCESSES THROUGH PHOTOELECTRIC CONDUCTIVITY OF THE FILM OF HYDROGENATED AMORPHOUS SILICON (A-SI:H)

U. Bobokhojaev; A. Nabiev; M. Usmanov; A.A. Botirjonov

doi:10.5281/zenodo.6634455

U. Bobokhojaev, A. Nabiev , M. Usmanov, A.A. Botirjonov

Abstract. In this manuscript,it was investigated that the mechanism of recombinational processes in the film of a-Si: H <B> in terms of the dependence of Stationary photoconductivity on temperature(The method of the dependence of Steady-State Photoconductivity on temperature). By using the solutions of continuity and electric equilibrium equations, they were explained that non-monotony and rebombination processes is differently related to D-centers by division temperature into two intervals for the strongly absorbed a -Si:H<B> are evident from the relation of σ ~ σ0(1/T).

Keywords: Hydrogenated Amorphous Silicon (a-Si:H), Photoelectric conductivity, private conductivity, centers of recombination, speed of generation, average lifetime, crack of mobility.

References:

1. О. А. Голикова, М. М. Казанин, А. Н. Кузнецов, Е. В. Богданова, ФТП, (2000), т. 34, В. 9, с. 66-70. 2. S.Zaynabidinov, U.Bobokhodzhaev, A.B. Nabiyev. N. Sharibayev The Mechanism of Hole Transport in Photocells Based on a-Si: H. International Journal of Scientific and Technology Research ISSN 2277-8616, 2020, Vol.9, №1, pp. 2589-2593. 3. Курова И. А., Нальгиева М. А., Ормонт Н. Н., Вестник МГУ, серия 3, Физика, Астрономия, (2005), № 4, с. 54-57. 4. О. А. Голикова, Домошевская Э. П., Кудоярова В. Х., Мездрогина М. М., Сорокина К. Л., Тереков В. А., Тростянский С. В., ФТП, (1989), т. 23. В. 3. с. 450-455 5. О. А. Голикова, У. С. Бобоходжаев, Дубро В. В., Икрамов Р. Г., М. М. Казанин, Мездрогина М. М., Яфаев Р. Р., ФТП, (1992), т. 26. В. 1. с. 66-70. 6. Балогуров Л. А., Кютте Я. Я., ФТП, (1985), т. 19. В.6. с. 1046-1049.