DETERMINATION OF THE DEPENDENCE OF GaMnAs RESISTANCE ON TEMPERATURE ACCORDING TO THE VAN DER PO METHOD

Sh.Niyozov; Sh.Ashirov; R.Daminov; M.Xudayberdiyev R. Abidova

doi:10.5281/zenodo.7352553

Sh.Niyozov, Sh.Ashirov, R.Daminov, M.Xudayberdiyev R. Abidova

Abstract. The paper presents the results of investigations of the electrophysical characteristics of GaMnAs layers obtained by low-temperature molecular beam epitaxy. The temperature dependence of the specific resistance of the GaMnAs epitaxial layer and the temperature dependence of ρ(T) on the graph of coordinates 1/T and lnρ are studied.

Keywords: Ferromagnet, Hall effect, GaMnAs epitaxial, Spintronics, magnetotransport, concentration.

References:

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