1. Khandelwal S. Physics-based compact models: An emerging trend in simulation-based GaN HEMT power amplifier design. // 2019 IEEE 20th Wireless and Microwave Technology Conference (WAMICON). IEEE, 2019, с. 1-4. 2. Коколов А. А., Шеерман Ф. И., Бабак Л. И. Обзор математических моделей СВЧ полевых транзисторов с высокой подвижностью электронов. // Доклады Томского государственного университета систем управления и радиоэлектроники, 2, 2010, с. 118-126. 3. EEHEMT Models: Keysight Advanced Design System. Documentation, P. 454–480. 4. Angelov I. et al. An empirical table-based FET model. // IEEE Transactions on Microwave Theory and Techniques, Т. 47, №. 12, 1999, с. 2350-2357. 5. Emekar S. et al. Modified angelov model for an exploratory GaN-HEMT technology with short, few-fingered gates. // 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2017, с. 117-120. 6. Khandelwal S. Advanced SPICE Model for GaN HEMTs: A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design. // Springer Nature, 2022, с. 188. 7. Radhakrishna U. et al. MIT virtual source GaNFET‐high voltage model: A physics based compact model for HV‐GaN HEMTs. // Physica Status Solidi, Т. 11, №. 3‐4, 2014, с. 848-852. 8. Xu J. et al. Dynamic FET model-DynaFET-for GaN transistors from NVNA active source injection measurements. // 2014 IEEE MTT-S International Microwave Symposium (IMS2014). IEEE, 2014, с. 1-3.